Laser-induced single event effects (SEE) and two-photon absorption (TPA) constitute a dynamic area of research aimed at replicating and understanding the transient disruptions in microelectronic ...
The Defense Advanced Research Projects Agency (DARPA) will host a Proposers Day in support of the Broad Agency Announcement (BAA) HR001123S0047, Advanced Sources for Single-event Radiation Testing ...
Why GaN components are highly resistant to radiation damage, such as total ionizing dose (TID), making GaN well-suited for harsh space environments. Why GaN devices remain vulnerable to single-event ...
The effects of cosmic rays were once discussed in “Doubled-up MOSFETs“. The idea was that component redundancy, paired MOSFETs in that case, would allow one MOSFET to still function even if its ...