Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

SiC MOSFETs are usually susceptible to damage as a result of short-circuiting events because of the fast switching speeds and low on-state resistance. 3 A team of researchers affiliated with the ...

University of Delaware engineers have demonstrated a way to effectively capture 99% of carbon dioxide from air using a novel electrochemical system powered by hydrogen. It is a significant advance for ...

Fire incidents in electric vehicles attributed to thermal runaway (TR) in power batteries have emerged as the most critical hazard compromising both user safety and industrial advancement 1.

USB Type-C has a lot going for it. It’s a universal standard and it replaces bulky, outmoded plugs that hogged a disproportionate amount of space in phones and computers. But it has an obvious ...