Nanowerk

Molybdenum disulfide memristors make the leap to standard CMOS chips

Nanoscale molybdenum disulfide memristors integrated onto standard CMOS chips achieve the lowest switching voltage reported ...
Compound Semiconductor

USTC team develops GaN/diamond CMOS power circuit

Researchers from the University of Science and Technology of China (USTC) and collaborators have manufactured a high-performance normally-off diamond p-FET featuring high-density 2D hole gas (HG) with ...
Science Daily

N-channel diamond field-effect transistor

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
Semiconductor Engineering

External Resistance Reduction By Nanosecond Laser Anneal In Si/SiGe CMOS Technology

We report on a significant pFET external resistance reduction (~40%) and corresponding 10% RON decrease by nanosecond laser annealing of S/D structures applicable to advanced technology nodes.
Electronic Design

GaN Transistors – Drive Control, Thermal Management, and Isolation

This year, several companies are expected to bring 600/650 V Gallium Nitride (GaN) power transistors to market. Almost all will be normally-on (depletion mode) transistors connected in a cascode ...
EDN

1-Channel 150 mA CMOS LDO Regulators

ROHM offers a wide lineup of general-purpose 3-pin regulators featuring low power consumption, high current capability, and high voltage resistance. ROHM’s LDO’s are ideal for mobile phones, ...